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GAP3SHT33-CAU Даташит - GeneSiC Semiconductor, Inc.

GAP3SHT33-CAU image

Номер в каталоге
GAP3SHT33-CAU

Компоненты Описание

Other PDF
  2015  

PDF
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page
3 Pages

File Size
329.3 kB

производитель
GENESIC
GeneSiC Semiconductor, Inc. GENESIC

Features
• 3300 V Schottky rectifier
• 175 °C maximum operating temperature
• Electrically isolated base-plate
• Positive temperature coefficient of VF
• Fast switching speeds
• Superior figure of merit QC/IF

Advantages
• Improved circuit efficiency (Lower overall cost)
• Significantly reduced switching losses compare to Si PiN
   diodes
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Low reverse recovery current
• Low device capacitance


APPLICATIONs
• Down Hole Oil Drilling, Geothermal Instrumentation
• High Voltage Multipliers
• Military Power Supplies


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode Chip ( Rev : 2012 )
GeneSiC Semiconductor, Inc.

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