DESCRIPTION
• 40A, 100V, RDS(on) = 0.055Ω
• Second Generation Rad Hard MOSFET Results
   From New Design Concepts

APPLICATIONS
   It is specially designed and processed to
   exhibit minimal characteristic changes to total dose and neutron
   exposures. Design and processing efforts are also directed to
   enhance survival to heavy ion (SEE) and/or dose rate
   (GAMMA DOT) exposure.