General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

FEATUREs
• 54 A, 30 V.
   RDS(ON) = 12 mΩ @ VGS = 10 V
   RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
• Low gate charge (18 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• DC/DC converter
• Motor drives