General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON)in a small package.

FEATUREs
• 56 A, 30 V  RDS(ON)= 9.5 mΩ@ VGS= 10 V
                  RDS(ON)= 13 mΩ@ VGS= 4.5 V
• Low gate charge (23nC typ.)
• Fast Switching
• High performance trench technology for extremely low RDS(ON)