General Description
This device is designed specifically as a single package solution for a DC/DC Switching MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.

FEATUREs
• Q1: N-Channel
    3.7 A, 20V. RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V
• Q2: P-Channel
    –3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V RDS(ON) = 141 mΩ @ VGS = –2.5V
• Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
• HBM ESD protection level > 2kV (Note 3)
• RoHS Compliant