FDMA1032CZ Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDMA1032CZ Datasheet PDF : 9 Pages
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Typical Characteristics: Q2 (P-Channel)
10
ID = -3.1A
8
6
4
VDS = -5V
-15V
-10V
2
0
0
2
4
6
8
10
12
14
Qg, GATE CHARGE (nC)
Figure 18. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
100us
1ms
10ms
1
100ms
1s
10s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 173oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 20. Maximum Safe Operating Area.
1000
800
f = 1MHz
VGS = 0 V
600
Ciss
400
Coss
200
Crss
0
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 19. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 173°C/W
40
TA = 25°C
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 21. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA =173 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FDMA1032CZ Rev B2 (W)
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