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FDFC2P100 Даташит - Fairchild Semiconductor

FDFC2P100 image

Номер в каталоге
FDFC2P100

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page
6 Pages

File Size
313.8 kB

производитель
Fairchild
Fairchild Semiconductor Fairchild

General Description
The FDFC2P100 combine the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel PowerTrench MosFET Drain pin.


FEATUREs
■ Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A
■ Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A
■ Low Gate Charge (3.4nC typ)
■ Compact industry standard SuperSOTTM-6 package

Schottky:
■ VF < 0.45 V at IF = 1A
■ RoHS Compliant

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Номер в каталоге
Компоненты Описание
PDF
производитель
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2005-04 )
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Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2007 )
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
ON Semiconductor

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