Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
-20
ID = -250µA, referenced to 25°C
VGS = 0V, VDS = -16V
VGS = ±12V, VDS = 0V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On-Resistance
gFS
Forward Transconductance
VGS = VDS, ID = -250µA
-0.6
ID = -250µA, referenced to 25°C
VGS = -4.5V, ID = -3.0A
VGS = -2.5V, ID = -2.2A
VGS = -4.5V, ID = -3.0A, TJ = 125°C
VDS = -5V, ID = -3.0A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -10V, VGS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at -10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = -10V, ID = -3.0A
VGS = -4.5V, RGEN = 6Ω
VGS = 0V to -10V VDD = -4.5V
ID = -3.0A
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain tio Source Diode forward Current
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.2A (Note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = -3.0A, di/dt = 100A/µs
Schottky Diode Characteristics
IR
Reverse Leakage
VF
Forward Voltage
VR = 20V
VR = 10V
IF = 500mA
IF = 1A
TJ = 25°C
TJ = 100C
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
Typ
-12
-0.9
3
95
150
130
5.4
335
80
40
6
9
11
12
4
3.4
0.9
1.0
-0.8
17
5
26
2.7
23
2.5
0.31
0.24
0.37
0.3
Max Units
-1
±100
V
mV/°C
µA
µA
-1.5
V
mV/°C
150
200
mΩ
252
S
445
pF
105
pF
60
pF
Ω
16
ns
20
ns
22
ns
8
ns
4.7
nC
nC
nC
-1.2
A
-1.2
V
ns
nC
400
µA
20
mA
200
µA
10
mA
0.4
0.35
V
0.45
0.42
FDFC2P100 Rev.C (W)
2
www.fairchildsemi.com