General Description
The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.

FEATUREs
• 76 A, 30 V  RDS(ON)max= 8.0 mΩ@ VGS= 10 V
                  RDS(ON)max= 10.4 mΩ@ VGS= 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (29nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
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Applications
• DC/DC converter
• Low side notebook