General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

FEATUREs
• 42 A, 30 V RDS(ON) = 16 mΩ @ VGS = 10 V
​​​​​​​                    RDS(ON) = 22 mΩ @ VGS = 4.5 V
• Low gate charge (22 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• DC/DC converter
• Motor drives