General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.

FEATUREs
• –8 A, –20 V RDS(ON) = 20 mΩ @ VGS = –4.5 V RDS(ON) = 25 mΩ @ VGS = –2.5 V RDS(ON) = 35 mΩ @ VGS = –1.8 V
• High performance trench technology for extremely low RDS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size

APPLICATIONs
• Battery management
• Load Switch
• Battery protection