General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
• –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V
• Fast switching speed
• ESD protection diode
• High performance trench technology for extremely low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

APPLICATIONs
• Battery management
• Load switch
• Battery protection