INTRODUCTION
The EMD3D256M08/16B 256Mb DDR3 Spin-transfer Torque MRAM (STT-MRAM) is a nonvolatile memory that offers non-volatility and high endurance at DDR3 speeds. The device is capable of DDR3 operation at rates of up to 1333MT/Sec/Pin. It is designed to comply with all DDR3 DRAM features including on-device termination (ODT) and internal ZQ calibration but with the benefit of data persistence and extremely high write cycle endurance. With Spin-Torque MRAM technology, cell refresh is not required, which greatly simplifies system design and reduces overhead.
All control and address inputs are synchronized with a pair of externally supplied differential clocks, with input latching at clock crosspoints. I/Os are synchronized with a pair of bidirectional strobes (DQS, DQS). The device uses a RAS/CAS multiplexing scheme and operates at 1.5V.

FEATURES
• Non-volatile 256Mb (32Mb x 8, 16Mb x 16) DDR3
• Supports standard DDR3 SDRAM features
• VDD = 1.5v +/- 0.075v
• Up to 667MHz fCK (1333MT/sec/pin)
• Page size of 512 bits (x8) or 1024 bits (x16)
• On-device termination
• On-Chip DLL aligns DQ, DQS, DQS transition with CK transition
• All addresses and control inputs are latched on rising edge of Clock
• Burst length of 8 with programmable Burst Chop length of 4
• Standard 10x13mm 78-Ball (x8) or 96-ball (x16) BGA Package