DDR3 SDRAM
2Gb: x4, x8, x16 DDR3 SDRAM

FEATUREs
• VDD= VDDQ= 1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
  – 64ms, 8192 cycle refresh at 0°C to 85°C
  – 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration