EIB1314-2P(2003) Даташит - Excelics Semiconductor, Inc.
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EIB1314-2P
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Excelics Semiconductor, Inc.
13.75-14.5GHz, 2W Internally Matched Power FET
• 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 30% TYPICAL)
• EIB FEATURES HIGH IP3(46dBm TYPICAL)
• +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
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PDF
производитель
13.75-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
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