EIB1011-4P Даташит - Excelics Semiconductor, Inc.
Номер в каталоге
EIB1011-4P
Компоненты Описание
Other PDF
PDF
page
1 Pages
File Size
21.6 kB
производитель
Excelics Semiconductor, Inc.
10.7-11.7GHz, 4W Internally Matched Power FET
• 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 30% TYPICAL)
• EIB FEATURES HIGH IP3(49dBm TYPICAL)
• +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
Page Link's:
1
Номер в каталоге
Компоненты Описание
PDF
производитель
10.7 ~ 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
14.0-15.35GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.75-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
10.7 – 11.7 GHz BAND / 4W X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
14.40-15.35GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
Share Link: