10.7 ~ 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET

DESCRIPTION
The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
● Internally impedance matched
● High output power P1dB=4.0W (TYP.) @f=10.7 ~ 11.7GHz
● High linear power gain GLP=8.0dB (TYP.) @f=10.7 ~ 11.7GHz
● High power added efficiency ηadd =28% (TYP.) @f=10.7 ~ 11.7GHz

APPLICATION
    For use in 10.7 ~ 11.7 GHz band amplifiers