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EFA120D-SOT89 Даташит - Excelics Semiconductor, Inc.

EFA120D-SOT89 image

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EFA120D-SOT89

Компоненты Описание

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2 Pages

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20.2 kB

производитель
Excelics
Excelics Semiconductor, Inc. Excelics

Features
• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
• +28.0dBm TYPICAL OUTPUT POWER
• 14.0dB TYPICAL POWER GAIN AT 2GHz
• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
• +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz
• 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY


APPLICATIONs
• Analog and Digital Wireless System
• HPA

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Номер в каталоге
Компоненты Описание
PDF
производитель
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.

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