Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +22.0dBm TYPICAL OUTPUT POWER
• 8.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY