Low Distortion GaAs Power FET

• VERY HIGH fmax: 100GHz
• +18.5dBm TYPICAL OUTPUT POWER
• 11.5dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE