RF Power MOSFET

♦ N-Channel Enhancement Mode
♦ Low Qgand Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency

FEATUREs
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced low Qgprocess
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz ardous materials Advantages
• Optimized for RF and high speed switching at frequencies to 50MHz
• Easy to mountóno insulators needed
• High power density