RF Power MOSFET

♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 30MHz Maximum Frequency

FEATUREs
• Isolated Substrate
    − high isolation voltage (>2500V)
    − excellent thermal transfer
    − Increased temperature and power cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
    − easier to drive
    − faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials

Advantages
• Optimized for RF and high speed switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density