Description
The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.
It is proposed in a bare die form and requires an external matching circuitry.

Main Features
■ Wide band capability up to 18GHz
■ Pulsed and CW operating modes
■ GaN technology: High Pout & High PAE
■ DC bias: VD=30V @ID_Q=200mA
■ Chip size 0.88x2x0.1mm
■ RoHS N°2011/65
■ REACh N°1907/2006