datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Philips Electronics  >>> BUK625R2-30C PDF

BUK625R2-30C Даташит - Philips Electronics

BUK625R2-30C image

Номер в каталоге
BUK625R2-30C

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
14 Pages

File Size
168.7 kB

производитель
Philips
Philips Electronics Philips

General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.


FEATUREs and benefits
◾ AEC Q101 compliant
◾ Suitable for standard and logic level
   gate drive sources
◾ Suitable for thermally demanding
   environments due to 175 °C rating


APPLICATIONs
◾ 12 V Automotive systems
◾ Electric and electro-hydraulic power
   steering
◾ Motors, lamps and solenoid control
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
   switching


Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Philips Electronics
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Nexperia B.V. All rights reserved

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]