N- CHANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications.

• Specified 100 Volt, 13.56 MHz Characteristics:
• Output Power = 200 Watts.
• Gain = 22dB (Typ.)
• Efficiency = 73% (Typ.)
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.