ARF442 Просмотр технического описания (PDF) - Advanced Power Technology
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ARF442 Datasheet PDF : 4 Pages
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ARF442/443
500
400
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
VDD = 100V
300
200
100
0
0
1
2
16
TJ = -55°C
VDS = 30V
250µSEC. PULSE TEST
12
@ <0.5 % DUTY CYCLE
3
4
5
6
7
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
8
9
10
Figure 2, RF Power Out vs RF Power In
1.2
VDS = VGS
1.1
1.0
TJ = +25°C
8
TJ = +125°C
0.9
4
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
10
5
LOimpeitreadtioBny
Here(ON)
R DS
1
.5
TC =+25°C
TJ =+150°C
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 3, Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
.1
1
5 10
50 100 300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Maximum DC Safe Operating Area
3,000
1,000
500
100
50
0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, Breakdown Voltage vs Temperature
Ciss
Coss
Crss
10
.01
.05
.1
.5
1
5
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
50
100
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