datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  NEC => Renesas Technology  >>> A1977-T1B PDF

A1977-T1B Даташит - NEC => Renesas Technology

2SA1977 image

Номер в каталоге
A1977-T1B

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
12 Pages

File Size
49.1 kB

производитель
NEC
NEC => Renesas Technology NEC

FEATURES
• High fT
   fT = 8.5 GHz TYP.
• High gain
   | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• High-speed switching characterstics
• Equivalent NPN transistor is the 2SC3583.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Номер в каталоге
Компоненты Описание
PDF
производитель
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
NEC => Renesas Technology
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Renesas Electronics
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]