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2SC3356-T1B-A Даташит - NEC => Renesas Technology

2SC3356 image

Номер в каталоге
2SC3356-T1B-A

Other PDF
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page
9 Pages

File Size
83.9 kB

производитель
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
   MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


Номер в каталоге
Компоненты Описание
PDF
производитель
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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