Номер в каталоге
2SC3356-T1B-A
производитель
![NEC](/logo/NEC.png)
NEC => Renesas Technology
![NEC](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Номер в каталоге
Компоненты Описание
PDF
производитель
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