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A1977 Даташит - Renesas Electronics

2SA1977 image

Номер в каталоге
A1977

Компоненты Описание

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page
14 Pages

File Size
158.7 kB

производитель
Renesas
Renesas Electronics Renesas

FEATURES
• High fT
   fT = 8.5 GHz TYP.
• High gain
   | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• High-speed switching characterstics
• Equivalent NPN transistor is the 2SC3583.


Номер в каталоге
Компоненты Описание
PDF
производитель
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
NEC => Renesas Technology
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
NEC => Renesas Technology
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC => Renesas Technology

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