DESCRIPTION
➤ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
➤ Advanced termination scheme to provide enhanced voltage-blocking capability;
➤ Avalanche Energy Specified;
➤ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
➤ The chips may packaged in TO-220 type and the typical equivalent product is 12N65;
➤ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers;
➤ Die size: 5.66mm*4.4mm;
➤ Chip Thickness: 300±20μm;
➤ Top metal: Al, Backside Metal: Ag.