DESCRIPTION
➤ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
➤ Advanced termination scheme to provide enhanced voltageblocking capability.
➤ Avalanche Energy Specified
➤ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
➤ The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60.
➤ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
➤ Die size: 1.96mm*1.78mm.
➤ Chip Thickness: 300±20μm.
➤ Top metal : Al, Backside Metal : Ag.