datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Renesas Electronics  >>> 2SK3482 PDF

2SK3482 Даташит - Renesas Electronics

2SK3482 image

Номер в каталоге
2SK3482

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
222.5 kB

производитель
Renesas
Renesas Electronics Renesas

DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Low on-state resistance
   RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A)
   RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
• Low Ciss: Ciss = 3600 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package


Номер в каталоге
Компоненты Описание
PDF
производитель
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]