DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
   RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A)
• Low input capacitance
   Ciss = 1070 pF TYP.
• Built-in gate protection diode