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2SK3481-ZJ Даташит - NEC => Renesas Technology

2SK3481 image

Номер в каталоге
2SK3481-ZJ

Компоненты Описание

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8 Pages

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NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Super low on-state resistance:
    RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A)
    RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss: Ciss = 2300 pF TYP.
• Built-in gate protection diode

Page Link's: 1  2  3  4  5  6  7  8 

Номер в каталоге
Компоненты Описание
PDF
производитель
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics

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