datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Toshiba  >>> 2SK2996 PDF

2SK2996 Даташит - Toshiba

2SK2996 image

Номер в каталоге
2SK2996

Other PDF
  2006   2009  

PDF
DOWNLOAD     

page
5 Pages

File Size
190.1 kB

производитель
Toshiba
Toshiba Toshiba

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
DC−DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS

• Low Drain−Source ON Resistance : RDS (ON) = 0.74 Ω (Typ.)
• High Forward Transfer Admittance : |Yfs| = 6.8 S (Typ.)
• Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 600 V)
• Enhancement-Mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]