2SK2662(2006) Даташит - Toshiba
Номер в каталоге
2SK2662
Компоненты Описание
Other PDF
PDF
page
6 Pages
File Size
861.9 kB
производитель
Toshiba
DC−DC Converter, Relay Drive and Motor Drive Applications
• Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance : |Yfs| = 4.0 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
Share Link: