This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM.

FEATUREs
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V
Ultra-low Gate charge(Typical 42nC)
Fast Switching Capability
100% Avalanche Tested
Maximum Junction Temperature Range(150℃)