General Description
This Power MOSFET is produced using Winsemis advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

FEATUREs
■ 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V
■ Low Crss (typical 3.62pF )
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
■ Maximum Junction Temperature Range(150℃ )