2SD2558 Даташит - Inchange Semiconductor
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2SD2558
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Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High DC Current Gain-
: hFE= 1500( Min.) @(IC= 1A, VCE= 5V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) B
APPLICATIONS
·Designed for series regulator and general purpose applications.
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