2SD2558 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD2558 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2558
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA
ICBO
Collector Cutoff current
VCB= 200V, IE= 0
IEBO
Emitter Cutoff current
VEB= 6V, IC= 0
hFE
DC Current Gain
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
IE= 0; VCB= 10V; ftest= 1MHz
IE= -0.5A; VCE= 10V
MIN TYP. MAX UNIT
200
V
1.5
V
0.1 mA
5.0 mA
1500
6500
110
pF
15
MHz
isc Website：www.iscsemi.cn
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