datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  HY ELECTRONIC CORP.  >>> 2N7002K PDF

2N7002K Даташит - HY ELECTRONIC CORP.

2N7002K image

Номер в каталоге
2N7002K

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
4 Pages

File Size
241.9 kB

производитель
HY
HY ELECTRONIC CORP. HY

RDS(ON), VGS @10V, IDS@ 500mA=2Ω
RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω


FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit, Battery Operated System, Drivers : Lamps, Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC

Page Link's: 1  2  3  4 

Номер в каталоге
Компоненты Описание
PDF
производитель
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]