2N7002K Просмотр технического описания (PDF) - HY ELECTRONIC CORP.
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2N7002K Datasheet PDF : 4 Pages
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2N7002K
Electrical Characteristics ( TC=25OC, unless otherwise noted )
Parameter
S ymb o l
Te s t C o nd i ti o n
Static
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C ur r e nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S (o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 500mA
VGS= 4.5V, I D= 200mA
VDS=60V, VGS=0V
VGS=+20V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On Ti me
Turn-Off Ti me
Input C apaci tance
Output Capacitance
Re ve rs e Tra nsfe r
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t on
t off
C iss
C oss
C rss
V DS=3 0 V, ID=2 0 0 mA
V GS=4 .5 V
VDD=30V ,ID =200mA
VGS=10V ,RG=10Ω
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
IS
Max.Pulsed Source Current
I SM
Diode Forward Voltage
V SD
-
-
IS=2 0 0 A , V GS=0 V
Min.
60
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ .
-
-
1.3
1.8
-
-
0.6
0.16
0.24
12.8
28
36
4.8
2.4
-
-
0.84
Max. Units
-
V
2.5
V
2
Ω
3
Ω
1
uA
+10
υΑ
0.8
0.2
nC
0.32
20
ns
38
45
9.6
pF
4.2
300
mA
2000 mA
1.3
V
REV1.0 : OCT. 2011
Switching Test Circuit
Gate Charge Test Circuit
PAGE . 2
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