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10N12-TO3 Даташит - Inchange Semiconductor

10N12-TO3 image

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10N12-TO3

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2 Pages

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167.3 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

◾ DESCRITION
◾ Designed for switching converters,motor dirvers,relay dirvers

◾ FEATURES
◾ Drain Current –ID= 10A@ TC=25℃
◾ Drain Source Voltage-
   : VDSS= 120V(Min)
◾ Static Drain-Source On-Resistance
   : RDS(on) = 0.3Ω (Max)
◾ SOA is Power-Dissipation Limited
◾ Nanosecond Switching Speeds
◾ High Input Impedance


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