P60NS04ZB Просмотр технического описания (PDF) - STMicroelectronics

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P60NS04ZB

N-channel clamped - 10mΩ- 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET

STMicroelectronics 

STP60NS04ZB

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 60A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 60A, di/dt = 100A/µs,

Reverse recovery charge VDD = 15V, Tj = 150°C

Reverse recovery current (see Figure 16)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

50

62

2.6

Max. Unit

60

A

240 A

1.5 V

ns

nC

A

5/13

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