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P60NS04ZB

N-channel clamped - 10mΩ- 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP60NS04ZB

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGSS

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate-source breakdown

voltage

VGS(th) Gate threshold voltage

RDS(on)

Static drain-source on

resistance

ID = 1mA, VGS =0

-40 < Tj < 175°C

VDS = 16V; TJ =150°C

VDS = 16V; TJ =175°C

VGS = ±10V;Tj =175°C

VGS = ±16V;Tj =175°C

IGS = 100µA

VDS = VGS, ID = 1mA

-40 < TJ < 150°C

VGS = 10V, ID = 30A

VGS = 16V, ID = 30A

Min.

33

18

1.7

Typ.

3

11

10

Max. Unit

V

50

µA

100 µA

50

µA

150 µA

V

4.2

V

15

mΩ

14

mΩ

Table 4.

Symbol

Dynamic

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS= 15V, ID=30A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

tr(Voff)

tf

tc

Qg

Qgs

Qgd

Turn-on delay time

Fall time

Cross-over time

Total gate charge

Gate-source charge

Gate-drain charge

Vclamp = 30V, ID = 60A

RG = 4.7Ω VGS = 10V

(see Figure 14)

VDD = 18V, ID = 60A,

VGS = 10V, RG = 4.7Ω

(see Figure 15)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

20

40

S

1700 2100 pF

800 1000 pF

190 240 pF

60

75

ns

45

60

ns

100 130 ns

48

42

nC

13

nC

16

nC

4/13

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