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P60NS04ZB

N-channel clamped - 10mΩ- 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET

STMicroelectronics 

STP60NS04ZB

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDG

IGS

IDM(1)

Ptot

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain gate current (continuous)

Gate source current (continuous)

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Gate-source ESD

VESD(G-S) (HBM - C = 100pF, R=1.5 kΩ)

Gate-drain ESD

VESD(G-D) (HBM - C = 100pF, R=1.5 kΩ)

VESD(D-S)

Drain-source ESD

(HBM - C = 100pF, R=1.5 kΩ)

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area.

Value

Clamped

Clamped

60

42

±50

±50

240

150

1

6

4

4

-65 to 175

Unit

V

V

A

A

mA

mA

A

W

W/°C

KV

KV

KV

°C

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering purpose

1

°C/W

62.5

°C/W

300

°C

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 30 V)

Max Value

Unit

60

A

400

mJ

3/13

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