B20NK50Z(2009) Просмотр технического описания (PDF) - STMicroelectronics

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B20NK50Z
(Rev.:2009)

N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

STMicroelectronics 

Electrical ratings

Table 4. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not-repetitive (pulse

width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting TJ=25 °C, ID=IAR, VDD=50 V)

STx20NK50Z

Value

Unit

17

A

850

mJ

4/18

Doc ID 9118 Rev 9

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