B20NK50Z(2009) Просмотр технического описания (PDF) - STMicroelectronics

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B20NK50Z
(Rev.:2009)

N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

STMicroelectronics 

STx20NK50Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, TO-247,

D²PAK

TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

500

± 30

17

10.71

68

190

1.51

17(1)

10.71

68

40

VISO

VESD(G-S)

dv/dt (3)

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

Gate source ESD (HBM-C=100 pF,

R=1.5 kΩ)

Peak diode recovery voltage slope

Tstg

Storage temperature

Tj

Max operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 17 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

--

2500

6000

4.5

-55 to 150

150

Unit

V

V

A

A

A

W

W/°C

V

V/ns

°C

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient

max

Maximum lead temperature for

soldering purpose

TO-220,

D²PAK

Value

Unit

TO-247 TO-220FP

0.66

3.1

°C/W

62.5

50

62.5 °C/W

300

°C

Doc ID 9118 Rev 9

3/18

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