B20NK50Z(2009) Просмотр технического описания (PDF) - STMicroelectronics

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B20NK50Z
(Rev.:2009)

N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

STMicroelectronics 

STB20NK50Z, STF20NK50Z

STP20NK50Z, STW20NK50Z

N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET

Zener-protected TO-220, TO-247, TO-220FP, D2PAK

Features

Type

STB20NK50Z

STF20NK50Z

STP20NK50Z

STW20NK50Z

VDSS

500 V

500 V

500 V

500 V

RDS(on)

max

ID

PW

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

17 A

17 A

17 A

17 A

190 W

40 W

190 W

190 W

3

2

1

TO-220

3

2

1

TO-220FP

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Application

■ Switching applications

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Table 1. Device summary

Order codes

Marking

STB20NK50Z

B20NK50Z

STF20NK50Z

F20NK50Z

STP20NK50Z

STW20NK50Z

P20NK50Z

W20NK50Z

3

2

1

TO-247

3

1

D²PAK

Figure 1. Internal schematic diagram

D(2)

G(1)

S(3)

AM01476v1

Package

D²PAK

TO-220FP

TO-220

TO-247

Packaging

Tape and reel

Tube

November 2009

Doc ID 9118 Rev 9

1/18

www.st.com

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