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LXE18300X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE18300X

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-mb

Rth mb-h

from junction to mounting base

from mounting base to heatsink

Tj = 100 °C

note 1

Note

1. See “Mounting recommendations in the General part of handbook SC15”.

MAX.

1.7

0.2

UNIT

K/W

K/W

CHARACTERISTICS

Tmb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

ICER

collector cut-off current

ICEO

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

CONDITIONS

VCB = 20 V; IE = 0

VCB = 40 V; IE = 0

VCE = 30 V; RBE = 220 Ω

VCE = 20 V; IB = 0

VEB = 1.5 V; IC = 0

VCE = 3 V; IC = 3 A

MIN.

−

−

−

−

−

20

MAX. UNIT

3

mA

30

mA

30

mA

30

mA

300 µA

100

APPLICATION INFORMATION

Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

MODE OF OPERATION

f

(GHz)

VCE

(V)

ICQ

(A)

PL1

(W)

Class AB (CW)

1.85

24

0.3

≥27; typ. 30

GPO

(dB)

≥8; typ. 9

1997 Feb 18

MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

4

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